On Wednesday in Scottsdale, Arizona, the team at ABI Research reported the latest data pointing to the escalating spending on RF power semiconductors for the wireless infrastructure markets.
Other markets are seeing some moderation in growth as the global economic picture and political factors come into play but some sub-markets are showing a nice upside, the report authors explain in a written statement.
Correspondingly, a new study from ABI Research shows that Gallium Nitride – long seen as the likely promising new “material of choice” for RF power semiconductors – is “continuing its march to capture share, especially in wireless infrastructure.”
“Gallium Nitride (GaN) is delivering increasing market share in 2014 and is forecast to be a significant force by 2019,” notes ABI Research Director Lance Wilson. “It bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide combined with the power handling capabilities of Silicon LDMOS. It is now a mainstream technology which has achieved meaningful market share and in future will capture a significant part of the market.”
The vertical markets showing the strongest performance outside of wireless infrastructure in the RF power semiconductor business are the defense oriented segments, which Wilson describes as being now “a significant market” in total.
ABI found that despite the poor press for defense oriented electronic hardware the actual performance in 2013 was better than originally thought for some sub-segments.